Spectra of the coefficient of defect absorption and the energy position of defects in amorphous hydrogenated siliconAuthor(s):
RG Ikramov, MA Nuriddinova and Kh. A MuminovAbstract:
In the present work, the influence
of light on defects of pseudo-doped amorphous hydrogenated silicon is theoretically investigated using the Davis-Mott approximation using the Kubo-Greenwood formula. It is showing that the shape of the spectra of the defective absorption coefficient is determining by the distribution of the density of states in the allowed zones. It was determined that the defect absorption spectra have maxima, where the maxima of the distribution of the energy position of defective states are located. It is shown that from the experimental data obtained for the defect absorption spectra one can determine the energy position of the defects.Pages: 12-16 | Views: 370 | Downloads: 205Download Full Article: Click Here
How to cite this article:
RG Ikramov, MA Nuriddinova, Kh. A Muminov. Spectra of the coefficient of defect absorption and the energy position of defects in amorphous hydrogenated silicon. Int J Multidiscip Trends 2019;1(1):12-16.